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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDG6304P-F169
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FDG6304P-F169

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Specifications
  • Part Number
    FDG6304P-F169
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    INTEGRATED CIRCUIT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDG6304P-F169.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Supplier Device Package
    SC-88/SC70-6/SOT-363
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.1 Ohm @ 410mA, 4.5V
  • Power - Max
    300mW
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    62pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    1.5nC @ 4.5V
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    Mosfet Array 2 P-Channel (Dual) 25V 410mA (Ta) 300mW Surface Mount SC-88/SC70-6/SOT-363
  • Current - Continuous Drain (Id) @ 25°C
    410mA (Ta)

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