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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDG6306P
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5189960

FDG6306P

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Reference Price(In US Dollars)

In stock
1+
$0.52
10+
$0.437
100+
$0.328
500+
$0.241
1000+
$0.186
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Specifications
  • Part Number
    FDG6306P
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET 2P-CH 20V 0.6A SC70-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDG6306P.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Supplier Device Package
    SC-70-6
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    420 mOhm @ 600mA, 4.5V
  • Power - Max
    300mW
  • Packaging
    Original-Reel®
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    FDG6306PDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    114pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2nC @ 4.5V
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array 2 P-Channel (Dual) 20V 600mA 300mW Surface Mount SC-70-6
  • Current - Continuous Drain (Id) @ 25°C
    600mA

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