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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA70N30TDTU
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6874741FGA70N30TDTU ImageAMI Semiconductor / ON Semiconductor

FGA70N30TDTU

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Specifications
  • Part Number
    FGA70N30TDTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 300V 201W TO3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGA70N30TDTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    300V
  • Vce(on) (Max) @ Vge, Ic
    1.5V @ 15V, 20A
  • Test Condition
    -
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    -
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Reverse Recovery Time (trr)
    21ns
  • Power - Max
    201W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench
  • Gate Charge
    125nC
  • Detailed Description
    IGBT Trench 300V 201W Through Hole TO-3PN
  • Current - Collector Pulsed (Icm)
    160A

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