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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA50N100BNTTU
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3762190FGA50N100BNTTU ImageAMI Semiconductor / ON Semiconductor

FGA50N100BNTTU

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Specifications
  • Part Number
    FGA50N100BNTTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1000V 50A 156W TO3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGA50N100BNTTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 60A
  • Test Condition
    600V, 60A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    34ns/243ns
  • Switching Energy
    -
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Power - Max
    156W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT and Trench
  • Gate Charge
    257nC
  • Detailed Description
    IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3PN
  • Current - Collector Pulsed (Icm)
    200A
  • Current - Collector (Ic) (Max)
    50A

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