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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA40T65UQDF
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331929FGA40T65UQDF ImageAMI Semiconductor / ON Semiconductor

FGA40T65UQDF

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Reference Price(In US Dollars)

In stock
1+
$3.78
10+
$3.399
450+
$2.642
900+
$2.37
1350+
$1.999
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Specifications
  • Part Number
    FGA40T65UQDF
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 80A 231W TO3PN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGA40T65UQDF.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    1.67V @ 15V, 40A
  • Test Condition
    400V, 40A, 6 Ohm, 15V
  • Td (on/off) @ 25°C
    32ns/271ns
  • Switching Energy
    989µJ (on), 310µJ (off)
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Reverse Recovery Time (trr)
    89ns
  • Power - Max
    231W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT
  • Gate Charge
    306nC
  • Detailed Description
    IGBT NPT 650V 80A 231W Through Hole TO-3PN
  • Current - Collector Pulsed (Icm)
    120A
  • Current - Collector (Ic) (Max)
    80A

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