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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA30N60LSDTU
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6760221FGA30N60LSDTU ImageAMI Semiconductor / ON Semiconductor

FGA30N60LSDTU

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Reference Price(In US Dollars)

In stock
1+
$5.32
10+
$4.781
450+
$3.716
900+
$3.335
1350+
$2.812
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Specifications
  • Part Number
    FGA30N60LSDTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 60A 480W TO3PN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGA30N60LSDTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    1.4V @ 15V, 30A
  • Test Condition
    400V, 30A, 6.8 Ohm, 15V
  • Td (on/off) @ 25°C
    18ns/250ns
  • Switching Energy
    1.1mJ (on), 21mJ (off)
  • Supplier Device Package
    TO-3P
  • Series
    -
  • Reverse Recovery Time (trr)
    35ns
  • Power - Max
    480W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Other Names
    FGA30N60LSDTU-ND
    FGA30N60LSDTUFS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    225nC
  • Detailed Description
    IGBT Trench Field Stop 600V 60A 480W Through Hole TO-3P
  • Current - Collector Pulsed (Icm)
    90A
  • Current - Collector (Ic) (Max)
    60A

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