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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA30N120FTDTU
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7005866FGA30N120FTDTU ImageAMI Semiconductor / ON Semiconductor

FGA30N120FTDTU

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Reference Price(In US Dollars)

In stock
1+
$6.68
10+
$5.998
450+
$4.662
900+
$4.183
1350+
$3.528
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Specifications
  • Part Number
    FGA30N120FTDTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 60A 339W TO3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGA30N120FTDTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • Test Condition
    -
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    -
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Reverse Recovery Time (trr)
    730ns
  • Power - Max
    339W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    44 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    208nC
  • Detailed Description
    IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN
  • Current - Collector Pulsed (Icm)
    90A
  • Current - Collector (Ic) (Max)
    60A

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