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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA30T65SHD
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2262310FGA30T65SHD ImageAMI Semiconductor / ON Semiconductor

FGA30T65SHD

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Reference Price(In US Dollars)

In stock
1+
$3.84
10+
$3.449
450+
$2.681
900+
$2.405
1350+
$2.029
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Specifications
  • Part Number
    FGA30T65SHD
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 650V 60A 238W TO-3PN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGA30T65SHD.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 30A
  • Test Condition
    400V, 30A, 6 Ohm, 15V
  • Td (on/off) @ 25°C
    14.4ns/52.8ns
  • Switching Energy
    598µJ (on), 167µJ (off)
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Reverse Recovery Time (trr)
    31.8ns
  • Power - Max
    238W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    54.7nC
  • Detailed Description
    IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN
  • Current - Collector Pulsed (Icm)
    90A
  • Current - Collector (Ic) (Max)
    60A

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