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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB19N10TM
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4283255FQB19N10TM ImageAMI Semiconductor / ON Semiconductor

FQB19N10TM

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Specifications
  • Part Number
    FQB19N10TM
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 19A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FQB19N10TM.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    100 mOhm @ 9.5A, 10V
  • Power Dissipation (Max)
    3.75W (Ta), 75W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    780pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 19A (Tc) 3.75W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    19A (Tc)

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