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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB19N20CTM
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4159379FQB19N20CTM ImageAMI Semiconductor / ON Semiconductor

FQB19N20CTM

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Reference Price(In US Dollars)

In stock
1+
$1.62
10+
$1.435
100+
$1.134
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Specifications
  • Part Number
    FQB19N20CTM
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 19A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FQB19N20CTM.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    170 mOhm @ 9.5A, 10V
  • Power Dissipation (Max)
    3.13W (Ta), 139W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    FQB19N20CTMCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1080pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    53nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 19A (Tc) 3.13W (Ta), 139W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    19A (Tc)

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