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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQU8P10TU
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3035007FQU8P10TU ImageAMI Semiconductor / ON Semiconductor

FQU8P10TU

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Reference Price(In US Dollars)

In stock
1+
$0.84
10+
$0.734
100+
$0.566
500+
$0.42
1000+
$0.336
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Specifications
  • Part Number
    FQU8P10TU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 100V 6.6A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FQU8P10TU.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    530 mOhm @ 3.3A, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 44W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    470pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    6.6A (Tc)

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