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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S10N120BNST
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4281799HGT1S10N120BNST ImageAMI Semiconductor / ON Semiconductor

HGT1S10N120BNST

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Reference Price(In US Dollars)

In stock
800+
$2.305
1600+
$1.944
2400+
$1.852
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Specifications
  • Part Number
    HGT1S10N120BNST
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 35A 298W TO263AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HGT1S10N120BNST.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 10A
  • Test Condition
    960V, 10A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    23ns/165ns
  • Switching Energy
    320µJ (on), 800µJ (off)
  • Supplier Device Package
    TO-263AB
  • Series
    -
  • Power - Max
    298W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    HGT1S10N120BNST-ND
    HGT1S10N120BNSTTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    44 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT
  • Gate Charge
    100nC
  • Detailed Description
    IGBT NPT 1200V 35A 298W Surface Mount TO-263AB
  • Current - Collector Pulsed (Icm)
    80A
  • Current - Collector (Ic) (Max)
    35A
  • Base Part Number
    HGT1S10N120

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