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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S7N60A4DS
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1438061HGT1S7N60A4DS ImageAMI Semiconductor / ON Semiconductor

HGT1S7N60A4DS

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Specifications
  • Part Number
    HGT1S7N60A4DS
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 34A 125W TO263AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HGT1S7N60A4DS.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 7A
  • Test Condition
    390V, 7A, 25 Ohm, 15V
  • Td (on/off) @ 25°C
    11ns/100ns
  • Switching Energy
    55µJ (on), 60µJ (off)
  • Supplier Device Package
    TO-263AB
  • Series
    -
  • Reverse Recovery Time (trr)
    34ns
  • Power - Max
    125W
  • Packaging
    Tube
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    37nC
  • Detailed Description
    IGBT 600V 34A 125W Surface Mount TO-263AB
  • Current - Collector Pulsed (Icm)
    56A
  • Current - Collector (Ic) (Max)
    34A

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