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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTD7N60C3S9A
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796355

HGTD7N60C3S9A

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Reference Price(In US Dollars)

In stock
1+
$1.97
10+
$1.767
100+
$1.42
500+
$1.167
1000+
$0.967
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Specifications
  • Part Number
    HGTD7N60C3S9A
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 14A 60W TO252AA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.HGTD7N60C3S9A.pdf
    2.HGTD7N60C3S9A.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 7A
  • Test Condition
    -
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    165µJ (on), 600µJ (off)
  • Supplier Device Package
    TO-252AA
  • Series
    -
  • Power - Max
    60W
  • Packaging
    Original-Reel®
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    HGTD7N60C3S9AOSDKR
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    23nC
  • Detailed Description
    IGBT 600V 14A 60W Surface Mount TO-252AA
  • Current - Collector Pulsed (Icm)
    56A
  • Current - Collector (Ic) (Max)
    14A

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