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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG18N120BND
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6418373HGTG18N120BND ImageAMI Semiconductor / ON Semiconductor

HGTG18N120BND

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Reference Price(In US Dollars)

In stock
1+
$7.17
10+
$6.481
450+
$5.124
900+
$4.672
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Specifications
  • Part Number
    HGTG18N120BND
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 54A 390W TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HGTG18N120BND.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 18A
  • Test Condition
    960V, 18A, 3 Ohm, 15V
  • Td (on/off) @ 25°C
    23ns/170ns
  • Switching Energy
    1.9mJ (on), 1.8mJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    75ns
  • Power - Max
    390W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT
  • Gate Charge
    165nC
  • Detailed Description
    IGBT NPT 1200V 54A 390W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    160A
  • Current - Collector (Ic) (Max)
    54A

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