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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG12N60B3
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4865953HGTG12N60B3 ImageAMI Semiconductor / ON Semiconductor

HGTG12N60B3

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Specifications
  • Part Number
    HGTG12N60B3
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 27A 104W TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HGTG12N60B3.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 12A
  • Test Condition
    480V, 12A, 25 Ohm, 15V
  • Td (on/off) @ 25°C
    26ns/150ns
  • Switching Energy
    150µJ (on), 250µJ (off)
  • Supplier Device Package
    TO-247-3
  • Series
    -
  • Power - Max
    104W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    51nC
  • Detailed Description
    IGBT 600V 27A 104W Through Hole TO-247-3
  • Current - Collector Pulsed (Icm)
    110A
  • Current - Collector (Ic) (Max)
    27A
  • Base Part Number
    HGTG12N60

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