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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTG27N120BN
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3342505HGTG27N120BN ImageAMI Semiconductor / ON Semiconductor

HGTG27N120BN

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Reference Price(In US Dollars)

In stock
1+
$6.84
10+
$6.144
450+
$4.776
900+
$4.286
1350+
$3.614
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Specifications
  • Part Number
    HGTG27N120BN
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 72A 500W TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    HGTG27N120BN.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 27A
  • Test Condition
    960V, 27A, 3 Ohm, 15V
  • Td (on/off) @ 25°C
    24ns/195ns
  • Switching Energy
    2.2mJ (on), 2.3mJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Power - Max
    500W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT
  • Gate Charge
    270nC
  • Detailed Description
    IGBT NPT 1200V 72A 500W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    216A
  • Current - Collector (Ic) (Max)
    72A

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