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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP5N120BND
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HGTP5N120BND

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Reference Price(In US Dollars)

In stock
800+
$1.82
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Specifications
  • Part Number
    HGTP5N120BND
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1200V 21A 167W TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.HGTP5N120BND.pdf
    2.HGTP5N120BND.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 5A
  • Test Condition
    960V, 5A, 25 Ohm, 15V
  • Td (on/off) @ 25°C
    22ns/160ns
  • Switching Energy
    450µJ (on), 390µJ (off)
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Reverse Recovery Time (trr)
    65ns
  • Power - Max
    167W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT
  • Gate Charge
    53nC
  • Detailed Description
    IGBT NPT 1200V 21A 167W Through Hole TO-220AB
  • Current - Collector Pulsed (Icm)
    40A
  • Current - Collector (Ic) (Max)
    21A

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