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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > HUFA75829D3ST

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HUFA75829D3ST

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Specifications

Part Number

HUFA75829D3ST
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 150V 18A DPAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

HUFA75829D3ST.pdf
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

TO-252AA
Series

UltraFET™
Rds On (Max) @ Id, Vgs

110 mOhm @ 18A, 10V
Power Dissipation (Max)

110W (Tc)
Packaging

Tape & Reel (TR)
Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

1080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

70nC @ 20V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

150V
Detailed Description

N-Channel 150V 18A (Tc) 110W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25°C

18A (Tc)

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