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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MMBTA63LT1
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MMBTA63LT1

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Specifications
  • Part Number
    MMBTA63LT1
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 30V 0.5A SOT23
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    1.MMBTA63LT1.pdf
    2.MMBTA63LT1.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 100µA, 100mA
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    225mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    MMBTA63LT1OSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    125MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 30V 500mA 125MHz 225mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10000 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    MMBTA63

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