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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB50N120FL2WAG
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NGTB50N120FL2WAG

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Reference Price(In US Dollars)

In stock
1+
$5.76
30+
$4.89
120+
$4.238
510+
$3.608
1020+
$3.043
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Specifications
  • Part Number
    NGTB50N120FL2WAG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT FIELD STOP 1.2KV TO247-4
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NGTB50N120FL2WAG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 50A
  • Test Condition
    600V, 50A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    28ns/150ns
  • Switching Energy
    2.15mJ (on), 1.4mJ (off)
  • Supplier Device Package
    TO-247-4L
  • Series
    -
  • Reverse Recovery Time (trr)
    281ns
  • Power - Max
    536W
  • Packaging
    Tube
  • Package / Case
    TO-247-4
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Field Stop
  • Gate Charge
    313nC
  • Detailed Description
    IGBT Field Stop 1200V 200A 536W Through Hole TO-247-4L
  • Current - Collector Pulsed (Icm)
    200A
  • Current - Collector (Ic) (Max)
    200A

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