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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB50N65S1WG
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5838530NGTB50N65S1WG ImageAMI Semiconductor / ON Semiconductor

NGTB50N65S1WG

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Reference Price(In US Dollars)

In stock
1+
$3.42
30+
$2.906
120+
$2.518
510+
$2.144
1020+
$1.808
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Specifications
  • Part Number
    NGTB50N65S1WG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT TRENCH 650V 140A TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NGTB50N65S1WG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 50A
  • Test Condition
    400V, 50A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    75ns/128ns
  • Switching Energy
    1.25mJ (on), 530µJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    70ns
  • Power - Max
    300W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    NGTB50N65S1WG-ND
    NGTB50N65S1WGOS
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench
  • Gate Charge
    128nC
  • Detailed Description
    IGBT Trench 650V 140A 300W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    140A
  • Current - Collector (Ic) (Max)
    140A

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