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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB75N65FL2WG
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403672NGTB75N65FL2WG ImageAMI Semiconductor / ON Semiconductor

NGTB75N65FL2WG

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Reference Price(In US Dollars)

In stock
1+
$9.00
30+
$7.749
120+
$6.728
510+
$5.859
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Specifications
  • Part Number
    NGTB75N65FL2WG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 75A TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NGTB75N65FL2WG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 75A
  • Test Condition
    400V, 75A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    110ns/270ns
  • Switching Energy
    1.5mJ (on), 1mJ (off)
  • Supplier Device Package
    TO-247
  • Series
    -
  • Reverse Recovery Time (trr)
    80ns
  • Power - Max
    595W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    NGTB75N65FL2WG-ND
    NGTB75N65FL2WGOS
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    23 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    310nC
  • Detailed Description
    IGBT Trench Field Stop 650V 100A 595W Through Hole TO-247
  • Current - Collector Pulsed (Icm)
    200A
  • Current - Collector (Ic) (Max)
    100A

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