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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSS60600MZ4T1G
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5731597NSS60600MZ4T1G ImageAMI Semiconductor / ON Semiconductor

NSS60600MZ4T1G

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Reference Price(In US Dollars)

In stock
1+
$0.59
10+
$0.509
100+
$0.38
500+
$0.299
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Specifications
  • Part Number
    NSS60600MZ4T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 60V 6A SOT-223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSS60600MZ4T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    350mV @ 600mA, 6A
  • Transistor Type
    PNP
  • Supplier Device Package
    SOT-223
  • Series
    -
  • Power - Max
    800mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    NSS60600MZ4T1GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    35 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount SOT-223
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1A, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    6A
  • Base Part Number
    NSS60600

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