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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTLJF3117PT1G
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4851375NTLJF3117PT1G ImageAMI Semiconductor / ON Semiconductor

NTLJF3117PT1G

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Reference Price(In US Dollars)

In stock
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$0.194
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Specifications
  • Part Number
    NTLJF3117PT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 2.3A 6-WDFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTLJF3117PT1G.pdf
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    6-WDFN (2x2)
  • Series
    µCool™
  • Rds On (Max) @ Id, Vgs
    100 mOhm @ 2A, 4.5V
  • Power Dissipation (Max)
    710mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-WDFN Exposed Pad
  • Other Names
    NTLJF3117PT1G-ND
    NTLJF3117PT1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    35 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    531pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    6.2nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    Schottky Diode (Isolated)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
  • Current - Continuous Drain (Id) @ 25°C
    2.3A (Ta)

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