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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTLJF3117PTAG

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NTLJF3117PTAG Image

AMI Semiconductor / ON Semiconductor

NTLJF3117PTAG

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Specifications

Part Number

NTLJF3117PTAG
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET P-CH 20V 2.3A 6-WDFN
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

NTLJF3117PTAG.pdf
Vgs(th) (Max) @ Id

1V @ 250µA
Vgs (Max)

±8V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

6-WDFN (2x2)
Series

-
Rds On (Max) @ Id, Vgs

100 mOhm @ 2A, 4.5V
Power Dissipation (Max)

710mW (Ta)
Packaging

Tape & Reel (TR)
Package / Case

6-WDFN Exposed Pad
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

531pF @ 10V
Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V
FET Type

P-Channel
FET Feature

Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V
Drain to Source Voltage (Vdss)

20V
Detailed Description

P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

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