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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NESG2030M04-T2-A
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3020013NESG2030M04-T2-A ImageCEL (California Eastern Laboratories)

NESG2030M04-T2-A

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Specifications
  • Part Number
    NESG2030M04-T2-A
  • Manufacturer/Brand
    CEL (California Eastern Laboratories)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 2GHZ SOT-343
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NESG2030M04-T2-A.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    2.3V
  • Transistor Type
    NPN
  • Supplier Device Package
    M04
  • Series
    -
  • Power - Max
    80mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-343F
  • Other Names
    NESG2030M04-T2-ACT
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    0.9dB ~ 1.1dB @ 2GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    16dB
  • Frequency - Transition
    60GHz
  • Detailed Description
    RF Transistor NPN 2.3V 35mA 60GHz 80mW Surface Mount M04
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 5mA, 2V
  • Current - Collector (Ic) (Max)
    35mA
  • Base Part Number
    NESG2030

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