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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NESG2107M33-A
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NESG2107M33-A

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Specifications
  • Part Number
    NESG2107M33-A
  • Manufacturer/Brand
    CEL (California Eastern Laboratories)
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 2GHZ M33
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NESG2107M33-A.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    5V
  • Transistor Type
    NPN
  • Supplier Device Package
    3-SuperMiniMold (M33)
  • Series
    -
  • Power - Max
    130mW
  • Packaging
    Bulk
  • Package / Case
    3-SMD, Flat Leads
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    0.9dB ~ 1.5dB @ 2GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    7dB ~ 10dB
  • Frequency - Transition
    10GHz
  • Detailed Description
    RF Transistor NPN 5V 100mA 10GHz 130mW Surface Mount 3-SuperMiniMold (M33)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    140 @ 5mA, 1V
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    NESG2107

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