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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > APT13003EZTR-G1
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5525856APT13003EZTR-G1 ImageDiodes Incorporated

APT13003EZTR-G1

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Reference Price(In US Dollars)

In stock
2000+
$0.095
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Specifications
  • Part Number
    APT13003EZTR-G1
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 465V 1.5A TO92
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Datasheets
    APT13003EZTR-G1.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    465V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 250mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-92
  • Series
    -
  • Power - Max
    1.1W
  • Packaging
    Tape & Box (TB)
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Other Names
    APT13003EZTR-G1DI
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Frequency - Transition
    4MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 465V 1.5A 4MHz 1.1W Through Hole TO-92
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    13 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    1.5A

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