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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMG4N65CTI
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DMG4N65CTI

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Reference Price(In US Dollars)

In stock
50+
$1.325
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Specifications
  • Part Number
    DMG4N65CTI
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 4A ITO-220AB
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Datasheets
    DMG4N65CTI.pdf
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    ITO-220AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    3 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    8.35W (Ta)
  • Packaging
    Tube
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Other Names
    DMG4N65CTIDDI
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    13.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)

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