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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > DMG563H10R
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5285922DMG563H10R ImagePanasonic

DMG563H10R

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Reference Price(In US Dollars)

In stock
3000+
$0.132
6000+
$0.124
15000+
$0.116
30000+
$0.106
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Specifications
  • Part Number
    DMG563H10R
  • Manufacturer/Brand
    Panasonic
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN/PNP SMINI5
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMG563H10R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 500µA, 10mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SMini5-F3-B
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms, 10 kOhms
  • Resistor - Base (R1)
    47 kOhms, 4.7 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-SMD (5 Leads), Flat Lead
  • Other Names
    DMG563H10R-ND
    DMG563H10RTR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    11 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V / 30 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    DMG563

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