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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > DMG6601LVT-7
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1709037DMG6601LVT-7 ImageDiodes Incorporated

DMG6601LVT-7

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Reference Price(In US Dollars)

In stock
3000+
$0.093
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Specifications
  • Part Number
    DMG6601LVT-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 30V 26TSOT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMG6601LVT-7.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Supplier Device Package
    TSOT-26
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    55 mOhm @ 3.4A, 10V
  • Power - Max
    850mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    DMG6601LVT-7DITR
    DMG6601LVT7
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    422pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    12.3nC @ 10V
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26
  • Current - Continuous Drain (Id) @ 25°C
    3.8A, 2.5A
  • Base Part Number
    DMG6601

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