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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > DMG6602SVT-7
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2844776DMG6602SVT-7 ImageDiodes Incorporated

DMG6602SVT-7

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Reference Price(In US Dollars)

In stock
1+
$0.50
10+
$0.349
100+
$0.229
500+
$0.136
1000+
$0.104
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Specifications
  • Part Number
    DMG6602SVT-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 30V TSOT23-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMG6602SVT-7.pdf
  • Vgs(th) (Max) @ Id
    2.3V @ 250µA
  • Supplier Device Package
    TSOT-23-6
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    60 mOhm @ 3.1A, 10V
  • Power - Max
    840mW
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    DMG6602SVT-7DIDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-23-6
  • Current - Continuous Drain (Id) @ 25°C
    3.4A, 2.8A
  • Base Part Number
    DMG6602

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