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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMJ70H600SH3
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DMJ70H600SH3

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Reference Price(In US Dollars)

In stock
75+
$1.667
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Specifications
  • Part Number
    DMJ70H600SH3
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET BVDSS: 651V 800V TO251
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Datasheets
    DMJ70H600SH3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-251
  • Series
    Automotive, AEC-Q101
  • Rds On (Max) @ Id, Vgs
    600 mOhm @ 2.4A, 10V
  • Power Dissipation (Max)
    113W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3, IPak, Short Leads
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Contains lead / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    643pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    18.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    700V
  • Detailed Description
    N-Channel 700V 11A (Tc) 113W (Tc) Through Hole TO-251
  • Current - Continuous Drain (Id) @ 25°C
    11A (Tc)

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