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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMN2005LP4K-7
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1955575DMN2005LP4K-7 ImageDiodes Incorporated

DMN2005LP4K-7

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Reference Price(In US Dollars)

In stock
1+
$0.62
10+
$0.436
100+
$0.287
500+
$0.169
1000+
$0.13
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Specifications
  • Part Number
    DMN2005LP4K-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 200MA 3-DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMN2005LP4K-7.pdf
  • Vgs(th) (Max) @ Id
    900mV @ 100µA
  • Vgs (Max)
    ±10V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    X2-DFN1006-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    1.5 Ohm @ 10mA, 4V
  • Power Dissipation (Max)
    400mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    3-XFDFN
  • Other Names
    DMN2005LP4KDICT
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    41pF @ 3V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)

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