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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMN2011UFDE-7
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6785671DMN2011UFDE-7 ImageDiodes Incorporated

DMN2011UFDE-7

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Reference Price(In US Dollars)

In stock
3000+
$0.263
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Specifications
  • Part Number
    DMN2011UFDE-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 11.7A UDFN2020-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMN2011UFDE-7.pdf
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    U-DFN2020-6 (Type E)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    9.5 mOhm @ 7A, 4.5V
  • Power Dissipation (Max)
    610mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-UDFN Exposed Pad
  • Other Names
    DMN2011UFDE-7DITR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2248pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    56nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 11.7A (Ta) 610mW (Ta) Surface Mount U-DFN2020-6 (Type E)
  • Current - Continuous Drain (Id) @ 25°C
    11.7A (Ta)
  • Base Part Number
    DMN2011

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