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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > ZXMN3G32DN8TA
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6177025ZXMN3G32DN8TA ImageDiodes Incorporated

ZXMN3G32DN8TA

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Reference Price(In US Dollars)

In stock
1+
$0.98
10+
$0.86
100+
$0.659
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Specifications
  • Part Number
    ZXMN3G32DN8TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 30V 5.5A 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZXMN3G32DN8TA.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Supplier Device Package
    8-SO
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    28 mOhm @ 6A, 10V
  • Power - Max
    1.8W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    1034-ZXMN3G32DN8CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    472pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    10.5nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    5.5A

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