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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > ZXTDC3M832TA
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ZXTDC3M832TA

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Reference Price(In US Dollars)

In stock
3000+
$0.388
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Specifications
  • Part Number
    ZXTDC3M832TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 50V/40V 4A/3A 8MLP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZXTDC3M832TA.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 40V
  • Vce Saturation (Max) @ Ib, Ic
    320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    8-MLP (3x2)
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-VDFN Exposed Pad
  • Other Names
    ZXTDC3M832TATR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    165MHz, 190MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 50V, 40V 4A, 3A 165MHz, 190MHz 1W Surface Mount 8-MLP (3x2)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 2A, 2V / 60 @ 1.5A, 2V
  • Current - Collector Cutoff (Max)
    25nA
  • Current - Collector (Ic) (Max)
    4A, 3A
  • Base Part Number
    ZXTDC3M832

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