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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > ZXTDE4M832TA
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6432473ZXTDE4M832TA ImageDiodes Incorporated

ZXTDE4M832TA

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Specifications
  • Part Number
    ZXTDE4M832TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP 80V/70V 8MLP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZXTDE4M832TA.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80V, 70V
  • Vce Saturation (Max) @ Ib, Ic
    325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
  • Transistor Type
    NPN, PNP
  • Supplier Device Package
    8-MLP (3x2)
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-VDFN Exposed Pad
  • Other Names
    ZXTDE4M832TACT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    160MHz, 180MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array NPN, PNP 80V, 70V 3.5A, 2.5A 160MHz, 180MHz 1W Surface Mount 8-MLP (3x2)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 200mA, 2V / 40 @ 1.5A, 5V
  • Current - Collector Cutoff (Max)
    25nA
  • Current - Collector (Ic) (Max)
    3.5A, 2.5A
  • Base Part Number
    ZXTDE4M832

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