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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2010
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5662421EPC2010 ImageEPC

EPC2010

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Reference Price(In US Dollars)

In stock
500+
$7.417
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Specifications
  • Part Number
    EPC2010
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 200V 12A BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2010.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 3mA
  • Vgs (Max)
    +6V, -4V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    Die
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 6A, 5V
  • Power Dissipation (Max)
    -
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    Die
  • Other Names
    917-1016-2
  • Operating Temperature
    -40°C ~ 125°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    540pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    7.5nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 12A (Ta) Surface Mount Die
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta)

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