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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2014
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1124531EPC2014 ImageEPC

EPC2014

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Reference Price(In US Dollars)

In stock
1+
$2.18
10+
$1.967
100+
$1.581
500+
$1.229
Inquiry Online
Specifications
  • Part Number
    EPC2014
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 40V 10A BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2014.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 2mA
  • Vgs (Max)
    +6V, -5V
  • Technology
    GaNFET (Gallium Nitride)
  • Supplier Device Package
    Die Outline (5-Solder Bar)
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    16 mOhm @ 5A, 5V
  • Power Dissipation (Max)
    -
  • Packaging
    Cut Tape (CT)
  • Package / Case
    Die
  • Other Names
    917-1018-1
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    325pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    2.8nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    N-Channel 40V 10A (Ta) Surface Mount Die Outline (5-Solder Bar)
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta)

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