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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2012CENGR
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68884EPC2012CENGR ImageEPC

EPC2012CENGR

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Reference Price(In US Dollars)

In stock
3000+
$1.148
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Specifications
  • Part Number
    EPC2012CENGR
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 200V 5A BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2012CENGR.pdf
  • ECAD Model
  • Voltage - Test
    100pF @ 100V
  • Voltage - Breakdown
    Die Outline (4-Solder Bar)
  • Vgs(th) (Max) @ Id
    100 mOhm @ 3A, 5V
  • Technology
    GaNFET (Gallium Nitride)
  • Series
    eGaN®
  • RoHS Status
    Tape & Reel (TR)
  • Rds On (Max) @ Id, Vgs
    5A (Ta)
  • Polarization
    Die
  • Other Names
    917-EPC2012CENGRTR
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    EPC2012CENGR
  • Input Capacitance (Ciss) (Max) @ Vds
    1nC @ 5V
  • Gate Charge (Qg) (Max) @ Vgs
    2.5V @ 1mA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar)
  • Drain to Source Voltage (Vdss)
    -
  • Description
    TRANS GAN 200V 5A BUMPED DIE
  • Current - Continuous Drain (Id) @ 25°C
    200V
  • Capacitance Ratio
    -

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