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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3900DV-T1-GE3
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5996295SI3900DV-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI3900DV-T1-GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.451
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Specifications
  • Part Number
    SI3900DV-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 20V 2A 6-TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI3900DV-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Supplier Device Package
    6-TSOP
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    125 mOhm @ 2.4A, 4.5V
  • Power - Max
    830mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    SI3900DV-T1-GE3TR
    SI3900DVT1GE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 4.5V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    2A
  • Base Part Number
    SI3900

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