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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3900DV-T1-E3
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4047768SI3900DV-T1-E3 ImageVishay Siliconix

SI3900DV-T1-E3

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Reference Price(In US Dollars)

In stock
1+
$0.68
10+
$0.584
25+
$0.545
100+
$0.436
250+
$0.405
500+
$0.343
1000+
$0.265
Inquiry Online
Specifications
  • Part Number
    SI3900DV-T1-E3
  • Manufacturer/Brand
    Vishay / Siliconix
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 20V 2A 6-TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI3900DV-T1-E3.pdf
  • Voltage - Test
    -
  • Voltage - Breakdown
    6-TSOP
  • Vgs(th) (Max) @ Id
    125 mOhm @ 2.4A, 4.5V
  • Series
    TrenchFET®
  • RoHS Status
    Digi-Reel®
  • Rds On (Max) @ Id, Vgs
    2A
  • Power - Max
    830mW
  • Polarization
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    SI3900DV-T1-E3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Manufacturer Part Number
    SI3900DV-T1-E3
  • Input Capacitance (Ciss) (Max) @ Vds
    4nC @ 4.5V
  • Gate Charge (Qg) (Max) @ Vgs
    1.5V @ 250µA
  • FET Feature
    2 N-Channel (Dual)
  • Expanded Description
    Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
  • Drain to Source Voltage (Vdss)
    Logic Level Gate
  • Description
    MOSFET 2N-CH 20V 2A 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    20V

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