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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4488DY-T1-E3
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SI4488DY-T1-E3

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Reference Price(In US Dollars)

In stock
1+
$2.20
10+
$1.986
100+
$1.596
500+
$1.241
1000+
$1.029
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Specifications
  • Part Number
    SI4488DY-T1-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 150V 3.5A 8-SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4488DY-T1-E3.pdf
  • Vgs(th) (Max) @ Id
    2V @ 250µA (Min)
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-SO
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    50 mOhm @ 5A, 10V
  • Power Dissipation (Max)
    1.56W (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4488DY-T1-E3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    150V
  • Detailed Description
    N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    3.5A (Ta)

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