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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4946CDY-T1-GE3
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SI4946CDY-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.01
10+
$0.892
100+
$0.705
500+
$0.547
1000+
$0.432
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Specifications
  • Part Number
    SI4946CDY-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHAN DUAL 60V SO-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4946CDY-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Supplier Device Package
    8-SO
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    40.9 mOhm @ 5.2A, 10V
  • Power - Max
    2W (Ta), 2.8W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4946CDY-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    5.2A (Ta), 6.1A (Tc)

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