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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIDR626DP-T1-GE3
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3806680SIDR626DP-T1-GE3 ImageElectro-Films (EFI) / Vishay

SIDR626DP-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$3.37
10+
$3.045
100+
$2.447
500+
$1.903
1000+
$1.577
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Specifications
  • Part Number
    SIDR626DP-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHAN 60V
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.SIDR626DP-T1-GE3.pdf
    2.SIDR626DP-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    3.4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerPAK® SO-8DC
  • Series
    TrenchFET® Gen IV
  • Rds On (Max) @ Id, Vgs
    1.7 mOhm @ 20A, 10V
  • Power Dissipation (Max)
    6.25W (Ta), 125W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    PowerPAK® SO-8
  • Other Names
    SIDR626DP-T1-GE3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    5130pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    102nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
  • Current - Continuous Drain (Id) @ 25°C
    42.8A (Ta), 100A (Tc)

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