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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ988DT-T1-GE3
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SIZ988DT-T1-GE3

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Reference Price(In US Dollars)

In stock
6000+
$0.566
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Specifications
  • Part Number
    SIZ988DT-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2 N-CH 30V 8-POWERPAIR
  • Lead Free Status / RoHS Status
  • Datasheets
    SIZ988DT-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    2.4V @ 250µA, 2.2V @ 250µA
  • Supplier Device Package
    8-PowerPair®
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V
  • Power - Max
    20.2W, 40W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerWDFN
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Manufacturer Standard Lead Time
    22 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 15V, 2425pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    10.5nC @ 4.5V, 23.1nC @ 4.5V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 30V 40A (Tc), 60A (Tc) 20.2W, 40W Surface Mount 8-PowerPair®
  • Current - Continuous Drain (Id) @ 25°C
    40A (Tc), 60A (Tc)

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