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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SIZ910DT-T1-GE3
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3349027SIZ910DT-T1-GE3 ImageElectro-Films (EFI) / Vishay

SIZ910DT-T1-GE3

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Specifications
  • Part Number
    SIZ910DT-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 30V 40A POWERPAIR
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIZ910DT-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA
  • Supplier Device Package
    8-PowerPair® (6x5)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    5.8 mOhm @ 20A, 10V
  • Power - Max
    48W, 100W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerWDFN
  • Other Names
    SIZ910DT-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1500pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    40nC @ 10V
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array 2 N-Channel (Half Bridge) 30V 40A 48W, 100W Surface Mount 8-PowerPair® (6x5)
  • Current - Continuous Drain (Id) @ 25°C
    40A
  • Base Part Number
    SIZ910

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