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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQ2361AEES-T1_GE3
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5141939

SQ2361AEES-T1_GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.235
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Specifications
  • Part Number
    SQ2361AEES-T1_GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 2.5A SSOT23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SQ2361AEES-T1_GE3.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs
    170 mOhm @ 2.4A, 10V
  • Power Dissipation (Max)
    2W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    SQ2361AEES-T1-GE3
    SQ2361AEES-T1_GE3-ND
    SQ2361AEES-T1_GE3TR
  • Operating Temperature
    -55°C ~ 175°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount
  • Current - Continuous Drain (Id) @ 25°C
    2.8A (Tc)

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